Add to BibSonomyAbstract
A quantitative analysis of carrier-carrier scattering and optical dephasing in semiconductors is presented. The calculations involve direct numerical integration of the Boltzmann equation for carrier-carrier scattering in the Born approximation.[1] The screening of the Coulomb interaction is treated consistently in the fully dynamical random phase approximation. Carrier relaxation rates are extracted from the Boltzmann-equation solution allowing the calculation of the optical dephasing rate.
© 1992 IQEC
PDF ArticleMore Like This
D. Scott, R. Binder, K. Henneberger, and S. W. Koch
CWG57 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992
F. Jahnke, S. W. Koch, U. Mohideen, and R. E. Slusher
QThG5 International Quantum Electronics Conference (IQEC) 1994
Faton S. Krasniqi, Yin-Peng Zhong, David A. Reis, Mirko Scholz, Robert Hartmann, Andreas Hartmann, Daniel Rolles, Artem Rudenko, Sascha W. Epp, Lutz Foucar, Mariano Trigo, Matthias Fuchs, David M. Fritz, Marco Cammarata, Diling Zhu, Henrik Lemke, Markus Braune, Markus Ilchen, Jörgen Larsson, Simone Techert, Lothar Strüder, Ilme Schlichting, and Joachim Ullrich
IW1D.2 International Conference on Ultrafast Structural Dynamics (ICUSD) 2012