Abstract

Spectral hole-burning in a collection of bound excitons embedded in semiconductor material is demonstrated for the first time. The spectral width of the burned hole is used to determine the dipole dephasing time T₂ of the bound excitons (D⁰, X) in a high purity GaAs crystal at 1.8 K. The estimated T₂ value is 150 ps, which is more than an order magnitude longer than the T₂ value reported for two-dimensional excitons in a quantum well structure. We discuss the extremely long T₂ observed for the bound excitons in relation to zero-dimensional quantum confinement effects.

© 1992 IQEC