Abstract
Spatially indirect, or interwell, excitons can form in semiconductor superlattices when the miniband width is smaller than the exciton binding energy [ 1 ], the hole and the electron being confined to neighbouring wells. In this presentation we report on an investigation of a GaAs/AlGaAs superlattice sample showing clear evidence of interwell excitons using femtosecond and picosecond time resolved differential transmission spectroscopy (DTS). We investigate the influence of manybody interactions on the direct and the interwell excitons by a moments analysis of the DTS data. This enables us to distinguish between broadening, shift and reduction of oscillator strength for the exciton resonances.
© 1996 Optical Society of America
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