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  • 2013 Conference on Lasers and Electro-Optics - International Quantum Electronics Conference
  • (Optica Publishing Group, 2013),
  • paper JSII_2_3

CW mid-IR OPO based on OP-GaAs

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Orientation-patterned GaAs (OP-GaAs) has grown in importance over the last decade as a quasi-phasematched (QPM) nonlinear optical (NLO) material for frequency conversion applications in the mid-infrared. OP-GaAs is attractive due to its high nonlinearity (d14 = 94 pm/V), high thermal conductivity (46 W/mK), low absorption loss, and wide transparency range (~0.9-18 μm). Since the first reports of pulsed (ns) SHG and OPO operation in OP-GaAs [1,2], ns OPOs have improved in output power and efficiency and device demonstrations have expanded to broader spectral ranges (including THz generation) and temporal regimes (fs and ps). Continuous wave (cw) frequency conversion in OP-GaAs has been limited to DFG, and more recently SHG demonstrations at relatively low power and efficiency [3,4]. Despite attempts by several groups, cw OPO operation in OP-GaAs has not been previously achieved. OP-GaAs must be pumped at λ > 1.73 μm to avoid two-photon absorption and free-carrier absorption, but to date cw OPO has yet to be demonstrated in any NLO material pumped beyond 1.55 μm since the OPO threshold scales as the cube of the pump wavelength.

© 2013 IEEE

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