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Photoconductive antenna (PCA) devices have been integral components of terahertz time-domain spectrometers as either emitters or detectors. The development of compact, easy-to-maintain, and inexpensive femtosecond fiber laser sources will pave way to the possible application of THz spectroscopy in outside-the-laboratory setting, especially for commercial and industrial applications. In this work, we study the THz emission properties of semi-insulating gallium arsenide (SI-GaAs) and low-temperature-grown gallium arsenide (LT-GaAs) under below-bandgap (1550 nm) and above-bandgap (780 nm) excitation conditions.
© 2022 Japan Society of Applied Physics, Optica Publishing Group
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