Abstract

(100), (110) and (111) oriented silicon shows different behavior when it is machined with 10 ps pulses in the NIR. For the (100) orientation the roughness increases to 2.8 µm when the peak fluence is raised to 1.6 J/cm² then drops down to a value below 200 nm due to melting effects for a fluence of 2 J/cm² and stays below 300 nm for fluences up to 7.5 J/cm². For the other orientations a completely different behavior is observed. The roughness constantly increases to 900 nm at 1.6 J/cm² and then further to about 8 µm for a peak fluence of 7.5 J/cm²

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