Abstract

The free radicals, silyl (SiH₃) and silylidyne (SiH), play important roles at the gas-surface interface during the chemical vapor deposition (CVD) of silicon films from silane, SiH₄. We will report recent experiments that enable resonance enhanced multiphoton ionization (REMPI) spectroscopy to detect these radicals with great sensitivity. These newly developed REMPI detection methods should allow experimentalists to measure the relative concentration profile of SiH₃, SiH, and Si radicals in the same experimental configuration and under the same conditions. For the SiH₃ radical the new spectra will also permit temperature measurements.

© 1990 Optical Society of America