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Highly Insensitive to Temperature and Ultra-Broadband Silicon Electro-optic Modulator

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Abstract

A novel compact silicon electro-optic modulator, entirely compatible with CMOS process, is theoretically proposed. Results reveal that such device enables operation over an ultra-broad bandwidth (~865 GHz), besides remaining highly insensitive to temperature variations (~75K).

© 2010 Optical Society of America

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