Abstract
Metal Organic Chemical Vapor Deposition (MOCVD) is a powerful technique for the generation of well-defined layers of metals and semiconductors [1]. Extending MOCVD by the use of lasers to Laser-MOCVD, selective area growth can be obtained ([2] and references therein). Laser induced deposition of structured aluminum films can be achieved using UV lasers and Al-alkyls like triisobutylaluminum (TIBA) as gaseous organometallic precursor [3, 4].
© 1987 Optical Society of America
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