Picosecond Transient Reflectivity and Raman Gain Spectra of GaAs

John Wessel; Steven Beck

doi:10.1364/LMD.1987.WA2

Topical Meeting on Lasers in Materials Diagnostics
Technical Digest Series (Optica Publishing Group, 1987),
paper WA2
•https://doi.org/10.1364/LMD.1987.WA2

Picosecond Transient Reflectivity and Raman Gain Spectra of GaAs

John Wessel and Steven Beck

Lasers in Material Diagnostics 1987

Albuquerque, New Mexico United States
11–12 February 1987
ISBN:

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Optical Diagnostics of Semiconductors and Thin-Films-Raman (WA)

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J. Wessel and S. Beck, "Picosecond Transient Reflectivity and Raman Gain Spectra of GaAs," in Topical Meeting on Lasers in Materials Diagnostics, Technical Digest Series (Optica Publishing Group, 1987), paper WA2.

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Abstract

Recently Woodall and co-workers¹ at IBM reported interesting results from a photowashing procedure applied to (100) GaAs. Unpinned behavior was observed immediately after washing. Photoluminescence yields measured from regions near the surface increased dramatically. The results suggested that the strong surface band bending ordinarily present in GaAs can be essentially eliminated by the photowashing procedure.

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