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Monolithic In0.83Ga0.17As Multiple Quantum Well Light- Emitting Diodes using InAsPSb Wide Bandgap Barrier

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Abstract

Monolithic InGaAs/InAsPSb MQW LEDs have been demonstrated. The eSWIR light sources are fully strain-relaxed on the InAsxP1-x metamorphic virtual substrate. The novel InAsPSb barrier can successfully enhance the confinement of the electrons in QWs.

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