Abstract

Recent work on the 0.5 eV below-bandgap surface state on 2x1-<111> Si cleaved in ultrahigh vacuum showed strong polarization anisotropy in near-normal incidence absorptance and reflectance measurements.^1,2 The present work describes the first experiments undertaken to systematically study anisotropies in the above-bandgap reflectance of cubic semiconductors. An experimentally simple configuration is used, wherein the sample is rotated while being illuminated with near-normal-incidence linearly polarized light and the second harmonic of the mechanical rotation frequency in the reflected beam is phase-sensitively detected and determined as a function of photon energy.

© 1985 Optical Society of America