Excimer Laser Etching and Oxidation of Silicon

Y. Horiike; M. Sekine; K. Horioka; T. Arikado; M. Nakase; H. Okano

doi:10.1364/MSBA.1985.WD2

Topical Meeting on Microphysics of Surfaces, Beams, and Adsorbates
Technical Digest Series (Optica Publishing Group, 1985),
paper WD2
•https://doi.org/10.1364/MSBA.1985.WD2

Excimer Laser Etching and Oxidation of Silicon

Y. Horiike, M. Sekine, K. Horioka, T. Arikado, M. Nakase, and H. Okano

Microphysics of Surfaces, Beams, and Adsorbates 1985

Santa Fe, New Mexico United States
4–6 February 1985
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Y. Horiike, M. Sekine, K. Horioka, T. Arikado, M. Nakase, and H. Okano, "Excimer Laser Etching and Oxidation of Silicon," in Topical Meeting on Microphysics of Surfaces, Beams, and Adsorbates, Technical Digest Series (Optica Publishing Group, 1985), paper WD2.

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Abstract

In previous report, an anisotropic etching of undoped poly-Si by a Hg-Xe lamp or a XeCl excimer laser in a Cl₂ gas was demonstrated. However, n⁺ Poly-Si, which is currently used as a gate material in MOS devices, is etched isotropically by photo-dissociated Cl radicals(1). For the LSI application, the anisotropic etching for n⁺ Poly-Si should be also achieved.

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