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Oxidation Kinetics of Silicon Surfaces Studied Using Laser Induced Thermal Desorption

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The reaction of oxygen with silicon surfaces is of great fundamental and technological interest. In this paper, we report on laser-induced thermal desorption (LITD), temperature programmed desorption (TPD) and Fourier Transform Infrared (FTIR) experiments (1,2) that were used to investigate the kinetics of both the fast and slow steps in the oxygen adsorption process. These studies allowed the initial reactive sticking coefficient of oxygen on Si (111) 7x7 to be measured as a function of surface temperature. In addition, the kinetics of the slow adsorption step were studied on both Si (111)7x7 and porous silicon versus surface temperature.

© 1989 Optical Society of America

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