The Decomposition of NH3 on Si (111) 7x7 Studied Using Laser-Induced Thermal Desorption

B.G. Koehler; P.A. Coon; S.M. George

doi:10.1364/MSBA.1989.WD2

Microphysics of Surfaces, Beams and Adsorbates
Technical Digest Series (Optica Publishing Group, 1989),
paper WD2
•https://doi.org/10.1364/MSBA.1989.WD2

The Decomposition of NH₃ on Si (111) 7x7 Studied Using Laser-Induced Thermal Desorption

B.G. Koehler, P.A. Coon, and S.M. George

Microphysics of Surfaces, Beams, and Adsorbates 1989

Salt Lake City, Utah United States
27 February–1 March 1989
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B. G. Koehler, P. A. Coon, and S. M. George, "The Decomposition of NH3 on Si (111) 7x7 Studied Using Laser-Induced Thermal Desorption," in Microphysics of Surfaces, Beams and Adsorbates, Technical Digest Series (Optica Publishing Group, 1989), paper WD2.

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Abstract

Silicon nitride is an important insulator in semiconductor devices. One of the most common methods of forming silicon nitride is nitridation by ammonia decomposition. As is the case with many semiconductor processes, the molecular details of the surface decomposition reaction are not fully understood.

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