Abstract

Many semiconductor surfaces reconstruct with substantial atomic rearrangements compared to the ideally-terminated bulk crystal structure. The use of particular monolayer films has been shown to remove surface reconstructions and to lead to a good approximation of a bulk-terminated crystal. The simplest case, in principle, is the direct saturation of dangling bonds with monovalent atoms. It has been found that hydrogen atoms bonding to Si and Ge surfaces do indeed remove the surface reconstructions and that the group VII atoms remove the reconstruction on the (111) surfaces.

© 1989 Optical Society of America