Abstract

Reaction of silicon with chlorine is studied by angle-resolved X-ray photoelectron spectroscopy. Chlorine surface concentration and penetration depth are determined. Excimer laser induced etching exhibits specific differences at 308nm and 248nm radiation. At 308nm the etch rates are strongly affected by gas phase parameters like chlorine gas pressure and gas flow. At 248nm higher etch rates are observed and the reactivity of silicon with molecular chlorine turns out to be rate limiting.

© 1989 Optical Society of America