Abstract

It is by now quite well established that photon beams, in particular lasers, can be used to induce or enhance chemical reactions between a gas and a solid surface [1]. Also, recent advances in applications of lasers to perform chemical etching and vapor deposition have raised firm expectation that the laser technique may have significant impact on processing materials for microelectronics [2]. In laser induced chemical etching of solids, the fundamental surface processes include the reaction between the adsorbate and substrate and the vaporization of product species. In order to better understand the radiation-gas-surface interaction mechanisms, we have carried out experiments with ESCA and Auger depth profiling, and time-resolved mass spectrometry in conjunction with laser irradiation of solid surfaces. Specifically, we have investigated Si/Cl₂, Ni-Fe/Cl₂, and Ag/Cl₂ systems.

© 1985 Optical Society of America