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Conferences > MSBIP > 1991 > MC > MC5

Silicon Atomic Layer Growth By Laser Beam/Si2H6 Adsorbates Interactions

Y. Nagasawa, T. Tanaka, S. Miyazaki, and M. Hirose

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Abstract

Saturated monomo1ecular adsorption of Si2H6 on a silicon surface held at temperatures around -60°C and subsequent irradiation of a single shot of ArF excimer laser fully decomposes the adsorbed layer to promote the atomic layer growth of Si. TEA CO2 laser irradiation at 10P6 line, which selectively excites the surface SiH3 bond, significantly reduces the content of the bonded hydrogen in the silicon layer. Possible mechanisms for the silicon atomic layer growth and the hydrogen reduction are also discussed.

© 1991 Optical Society of America

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