UV Laser-Induced Interaction of Cl2 with GaAs(110)

G. Haase; V. Liberman; M. C. Shih; R. M. Osgood

doi:10.1364/MSBIP.1991.TuA3

Microphysics of Surfaces: Beam-Induced Processes
Technical Digest Series (Optica Publishing Group, 1991),
paper TuA3
•https://doi.org/10.1364/MSBIP.1991.TuA3

UV Laser-Induced Interaction of Cl₂ with GaAs(110)

G. Haase, V. Liberman, M. C. Shih, and R. M. Osgood

The Microphysics of Surfaces: Beam-Induced Processes 1991

Santa Fe, New Mexico United States
11–13 February 1991
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Beam-Assisted Etching (TuA)

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G. Haase, V. Liberman, M. C. Shih, and R. M. Osgood, "UV Laser-Induced Interaction of Cl2 with GaAs(110)," in Microphysics of Surfaces: Beam-Induced Processes, Technical Digest Series (Optica Publishing Group, 1991), paper TuA3.

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Abstract

We have studied the UV laser-induced interaction of molecular chlorine with a GaAs(110) surface under ultra-high vacuum (UHV) conditions. Unlike previous studies of this system [1,2,3], we concentrated on well-defined surfaces, known coverages and low laser fluences.

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