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Anomalous Absorption of Silicon Nanocrystals in Silicon-rich SiO1.25 Matrix Precipitated by CO2 Laser Annealing

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Abstract

The structural aspects, the luminescent and optical properties and localized synthesis of 4.2-5.6 nm-nc-Si in Si-rich SiO1.25 film by a direct-writing CO2 laser rapid-thermal-annealing at the ablation threshold intensity of 5.8 kW/cm2 is demonstrated.

© 2006 Optical Society of America

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