Abstract

There have been growing interest in III-V semiconductors as promising nonlinear optical materials for frequency conversion devices. These devices are based on quasi-phase-matching that is achieved by spatially modulating large quadratic optical nonlinearities of semiconductors [1–5]. In order to exploit the large nonlinearities of semiconductor epitaxial films, we have developed two methods to determine the nonlinear optical coefficients of thin films by reflected second-harmonic measurements [6,7], In this paper, we will present nonlinear optical properties of wide-bandgap semiconductors, A1P, ion-implanted GaP and SiC, characterized by the reflected second-harmonic techniques.

© 1996 Optical Society of America