Demonstration of an Optoelectronic Dual-Diode Optically Controlled Optical Gate with a 20 Picosecond Repetition Period

M. B. Yairi; H.V. Demir; C.W. Coldren; J.S. Harris; D.A.B. Miller

doi:10.1364/NLO.2000.TuD5

Nonlinear Optics: Materials, Fundamentals and Applications
OSA Trends in Optics and Photonics (Optica Publishing Group, 2000),
paper TuD5
•https://doi.org/10.1364/NLO.2000.TuD5

Demonstration of an Optoelectronic Dual-Diode Optically Controlled Optical Gate with a 20 Picosecond Repetition Period

M. B. Yairi, H.V. Demir, C.W. Coldren, J.S. Harris, and D.A.B. Miller

Nonlinear Optics: Materials, Fundamentals and Applications 2000

Kaua'i-Lihue, Hawaii United States
ISBN: 1-55752-645-1

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M. B. Yairi, H. V. Demir, C. W. Coldren, J. S. Harris, and D. A. B. Miller, "Demonstration of an Optoelectronic Dual-Diode Optically Controlled Optical Gate with a 20 Picosecond Repetition Period," in Nonlinear Optics: Materials, Fundamentals and Applications, T. Li, ed., Vol. 46 of OSA Trends in Optics and Photonics (Optica Publishing Group, 2000), paper TuD5.

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Abstract

Using surface-normal pulses, a low-power, optically controlled optical gate incorporating two stacked AlGaAs diodes opens and closes within 20 picoseconds with a 30% reflectivity change. Repeated gating with 20 picosecond periods is demonstrated, matching simulations.

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