Abstract

In spite of the large lattice mismatch between Ge and Si, high quality layers of Ge_1-xSi_x covering the entire range of alloy compositions have been grown utilizing strained-layer epitaxy methods. Such work has led to the study of artificial crystals containing Ge_mSi_n structures with m and n less than seven,¹ of quasiperiodic Fibonacci superlattices,² and of multiple layers of Ge grown on Si substrates.³ The study of such materials is of much interest both from a basic physics point of view and for designing devices with unusual electro-optic properties.

© 1988 Optical Society of America