Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Optimization of the photoyield of platinum silicide Schottky barrier diodes

Open Access Open Access

Abstract

Measurements of the reflection and transmission in the mid-infrared of varying thicknesses (5400 Å) of platinum silicide films on silicon substrates are presented. The data are used to calculate the absorption and optical constants (n,k) of the thin films; the optical constants are then used to determine the structure of the optical cavity required to optimize the absorption of the metal film. Finally, a model for internal photoemission is combined with the calculated absorption measurements and the structure is reoptimized to determine the cavity structure required for greatest photoyield.

© 1985 Optical Society of America

PDF Article
More Like This
Diffusion model for the internal photoresponse of PtSi/p-Si Schottky barrier diodes

DOUGLAS E. MERCER and C. ROBERT HELMS
THK34 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

Monte Carlo Investigation of Hot Carriers Generated by Subpicosecond Laser Pulses in Schottky Barrier Diodes*

M.A. Osman, U. Ravaioli, and D.K. Ferry
WE12 Picosecond Electronics and Optoelectronics (UEO) 1985

Determination of Barrier Height of Boron Doped Polycrystalline Diamond Thin Film Schottky Diodes Using a Capacitance-Voltage Technique

Ganming Zhao, Elaine Charlson, Tina Stacy, and E. J. Charlson
DEDS141 Applications of Diamond Films and Related Materials (DFM) 1995

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.