Carrier relaxation processes in semiconductors probed by ultrashort optical pulses

Jagdeep Shah

doi:10.1364/OAM.1986.THB1

Annual Meeting Optical Society of America
Technical Digest Series (Optica Publishing Group, 1986),
paper THB1
•https://doi.org/10.1364/OAM.1986.THB1

Carrier relaxation processes in semiconductors probed by ultrashort optical pulses

Jagdeep Shah

OSA Annual Meeting 1986

Seattle, Washington United States
19–25 October 1986
ISBN:

From the session
Symposium on Dynamical Properties of Semiconductors under Ultrashort Optical Excitation (THB)

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J. Shah, "Carrier relaxation processes in semiconductors probed by ultrashort optical pulses," in Annual Meeting Optical Society of America, Technical Digest Series (Optica Publishing Group, 1986), paper THB1.

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Abstract

Optical spectroscopy provides a powerful technique for measuring the distribution function of carriers in a semiconductor. Since the distribution function under external perturbations is determined by various scattering processes, this technique provides information about microscopic scattering rates which is not obtainable through the usual transport measurements.

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