Abstract

Novel high-responsivity IR detectors at λ = 10 μm have been demonstrated based on intersub-band absorption in GaAs/Al_xGa_1−xAs quantum wells. Following photoexcitation, the electrons efficiently tunnel out of the quantum wells with a large hot electron mean free path for high field transport through the superlattice. We achieved responsivities of R = 2 A/W for an applied bias voltage of V_a = 9 V.

© 1987 Optical Society of America