Abstract

Efficient luminescence from crystalline silicon (x-Si) could be an important step toward the goal of integrating optics and modern electronics. The light emitted from the recombination of an exciton bound to an isoelectronic impurity has shown promise as a possible way this goal could be achieved. The recent discovery of sulfur as an impurity which exhibits isoelectronic bound exciton (IBE) emission¹ at λ = 1.32 μm has prompted the study of other chalcogens for similar behavior. We report the results of an investigation of photoluminescence (PL) from x-Si samples that contain selenium and oxygen impurities. Typically, the samples were treated in the same manner as the sulfur-doped samples in Ref. ¹. Results from experiments investigating the temperature dependence of the IBE lifetime and the PL spectrum are presented and compared with similar experiments involving sulfur.

© 1987 Optical Society of America