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Conferences > OAM > 1987 > MR > MR4

Excitons and nonlinear optical effects in II-VI compound semiconductor quantum wells

Arto Nurmikko, S.-K. Chang, D. Lee, A. Mysyrowicz, Q. Fu, L. Kolodziejski, and R. Gunshor

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Abstract

Methods of advanced epitaxy are now yielding versatile microstructures based on II-VI compound semiconductors. For wider gap materials in this family, excitonic aspects frequently dominate optical properties near the lowest interband transitions. We review some recent developments with CdTe- and ZnSe-based materials where associated alloys such as (Cd, Mn)Te or (Zn, Mn)Se permit the additional manipulation of lower dimensional excitons in layered structures.

© 1987 Optical Society of America

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