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Optica Publishing Group
  • International Conference on Quantum Electronics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper ThB5

STRONG COUPLING OF PHONONS AND EXCITONS IN SEMICONDUCTOR SUPERLATTICES: THE CASE OF ZnSe/ZnTe HETEROSTRUCTURES

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Abstract

A number of wide bandgap II-VI compound semiconductor superlattices have been synthesized in the past couple of years, mainly by molecular beam epitaxy. These structures, usually based on ZnSe, ZnTe, ZnS, and a number of their alloys, offer an opportunity for development of optoelectronic device technology in the blue region of the wavelength spectrum. At the same time, many physical parameters of II-VI materials are sufficiently different, say, from, those of III—V compounds, so that distinct electronic and optical phenomena can also be expected in these new artificial microstructures. For example, there is recent evidence for the presence of robust biexcitons and associated large optical nonlinearities in. ZnSe/(Zn,Mn)Se quantum wells [1].

© 1988 Optical Society of America

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