Abstract

We report the demonstration of a new kind of optical amplitude modulator for single-mode fiber applications at 1.3-μm wavelength. This work demonstrates the feasibility of using an all-silicon device in the interface between integrated silicon circuits and local-area optical communications systems. The device is intended for use in applications where the heteroepitaxy of direct bandgap or electrooptic materials or the bonding of hybrid-circuits to silicon integrated circuits is not feasible. It is fabricated using silicon epitaxy and planar fabrication technology and is suitable for integration with other bipolar devices.

© 1988 Optical Society of America