Abstract

The semi-insulating blocked planar buried heterostructure (SIPBH) laser has been described previously [1,2]. It combines a liquid phase epitaxial (LPE) or a metal organic vapor phase deposition (MOCVD) growth for the InGaAsP/InP double heterostructure (DH) base wafer followed by a regrowth by MOCVD for the blocking and cap layers. The characteristics of the laser include large modulation bandwidth and high output power [2]. Since the active layer is planar in this device, it is suitable for the fabrication of gratings that are required for single longitudinal mode operation. In this paper we describe the fabrication and performance of a first order grating distributed feedback (DFB) laser based on the SIPBH structure operating at 1.3 micron wavelength. High power wide bandwidth DFB lasers operating at 1.5 micron have been recently reported [3]. These lasers, however, required etching of a very narrow contact mesa (about 5 micron wide) to reduce the parasitic capacitance. In the present work wider contact mesas of about 50 micron width could be used because of the inherently low capacitance of the MOCVD grown Fe doped semi-insulating (SI) InP blocking layers.

© 1988 Optical Society of America