Abstract

We present design procedures and performance calculations for an integrated optical 8-bit tapped delay line device to be fabricated on a 3-in. lithium niobate (LNO) wafer. It is composed of electrooptic and holographic diffraction gratings and, under the limitation of 1-μm lithography, can be designed to operate at data rates exceeding 100 Gbit/s. Analysis for both TE and TM modes, which includes the effects of off-axis propagation in the uniaxial LNO crystal, is discussed. Potential use includes code generation, time division multiplexing, and matrix multiplication.

© 1988 Optical Society of America