Abstract

Laser-induced degradation of GaAs bandgap photoluminescence (PL) has been reported by several workers^1,2 but the physical mechanism responsible for this decrease remains unclear. The degradation is not caused by surface oxidation and it is thought to be the result of a nonradiative recombination enhanced defect reaction.¹ Using in situ Raman scattering (RS) and PL we have observed significant decreases in bandgap PL and the formation of solid arsenic at the sample surface. In addition, the lattice temperature and the electron temperature of the spot being damaged have been measured by RS and PL, respectively. We present results as a function of laser power, dopant type, and density and for both capped and free GaAs surfaces.

© 1989 Optical Society of America