Abstract

Laser enhanced deposition of III-V semiconductor films is often performed under conditions where laser induced decomposition of the group HI alkyl is rate-limiting. Understanding the chemistry is important for optimizing growth rate selectivity and for reducing carbon incorporation. We report X-ray photoelectron spectroscopy (XPS) studies of thermal decomposition and excimer laser stimulated decomposition of triethylgallium (TEGa) and trimethylgallium (TMGa) adsorbed on single crystal GaAs(100) in ultrahigh vacuum. Kinetic models of thermal decomposition that relate results obtained with widely different heating rates (10^-2 vs10¹¹ K/s) are presented.

© 1989 Optical Society of America