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Optically induced variability of strain-induced electric fields and band structure in (111) GaSb/AISb quantum wells

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Abstract

As a consequence of the piezoelectric effect and the strain induced from pseudomorphic growth, quantum wells grown in the (111) direction from III-V materials are expected to exhibit large built-in electric fields. We show that these built-in fields can be reduced or screened by the optical generation of electon-hole pairs.

© 1990 Optical Society of America

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