Abstract
Receiver OEICs, in which AlInAs/GaInAs HEMTs and GaInAs pin PDs are monolithically integrated, are described. The receiver OEIC was grown by OMVPE on a recessed InP substrate and processed by a simple full-wafer fabrication technique. The receiver exhibited high sensitivity to giga-bit rate signals.
© 1990 Optical Society of America
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