Abstract

Advances in material growth and device technologies have permitted the demonstration of ultra-high-speed InP/InGaAs heterojunction bipolar transistors (HBTs), as well as integrated circuits based on these high performance devices. In this talk, progress in the extension of these technologies to HBT-based, monolithic optoelectronic integrated circuit (OEIC) phototreceivers for the long-wavelength (1.3-1.6 µm) region will be described.

© 1990 Optical Society of America