Abstract

We have investigated the dielectric properties of GaAs in several calculations that incorporate the effects of both temperature and subband coupling in the valence band. We find that for certain energies and moments, the dielectric function of the realistic system diverges strongly from that associated with either the one-band effective-mass model or the plasmon pole approximation. We finally applied our dielectric function model to the quasiparticle correlation energy and thus generated curves for the temperature-dependent band-gap renormalization. This quantity is critical in determining the actual emission and absorption line positions in optoelectronic devices.

© 1990 Optical Society of America