Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Time-dependent characteristics of semiconductor resonant structures

Not Accessible

Your library or personal account may give you access

Abstract

Double-barrier tunneling structures operate based on quantum mechanical tunneling through two barriers.1 Quantum electron wave structures operate based on traveling-wave propagation above all conduction band edges.2 These are the fundamental structures proposed to achieve ballistic electron transport devices in semiconductors. The time-dependent behavior of resonant tunneling structures has been discussed extensively in the literature, but no such analysis has been performed on quantum wave structures. A numerical solution of the time-dependent effective mass equation is used to calculate the traversal time of a Gaussian packet and the percentage of the packet transmitted for resonant tunneling and quantum wave structures.

© 1991 Optical Society of America

PDF Article
More Like This
Electron waveguiding in quantum wells, voltage- induced quantum wells, and quantum barriers

D. W. Wilson, E. N. Glytsis, and T. K. Gaylord
ThF5 OSA Annual Meeting (FIO) 1991

Testing multilayer semiconductor electron wave devices using ballistic electron emission microscopy

Gregory N. Henderson, Thomas K. Gaylord, Elias N. Glytsis, Phillip N. First, and William J. Kaiser
ThF4 OSA Annual Meeting (FIO) 1991

Semiconductor Ballistic Electron Reflection, Refraction, Interference, and Diffraction Effects: Modeling and Quantum Device Applications

T. K. Gaylord, G. N. Henderson, E. N. Glytsis, D. W. Wilson, P. N. First, and D. B. Walker
TuE5 Integrated Photonics Research (IPR) 1992

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.