Abstract

Our recent progress in researching receiver OEICs based on InGaAs metal-semiconductor-metal (MSM) photodetectors and high-electron-mobility-transistor (HEMT) amplifiers is reviewed. We have built three different receiver OEICs for different system applications. The basic fabrication process was OMCVD growth on a patterned substrate by which the epitaxial layer structures of a MSM photodetector and HEMT are grown sequentially on prepatterned InP substrates in one growth run. Both MSM photodetector and HEMT are based on InAlAs/InGaAs heterostructures in which InGaAs is a light absorption layer of the MSM photodetector and a channel layer of the HEMT. This integration technology represents a major step toward achieving high-performance and low-cost light-wave receiving components.

© 1992 Optical Society of America