InGaAsP (1.3 μm) vertical-cavity lasers using GaAs/AlAs mirrors

J. J. Dudley; M. Ishikawa; B. I. Miller; B. I. Miller; D. I. Babic; R. Mirin; W. B. Jiang; M. Shimizu; J. E. Bowers; E. L. Hu

doi:10.1364/OAM.1992.FKK7

Optical Society of America Annual Meeting
Technical Digest Series (Optica Publishing Group, 1992),
paper FKK7
•https://doi.org/10.1364/OAM.1992.FKK7

InGaAsP (1.3 μm) vertical-cavity lasers using GaAs/AlAs mirrors

J. J. Dudley, M. Ishikawa, B. I. Miller, D. I. Babic, R. Mirin, W. B. Jiang, M. Shimizu, J. E. Bowers, and E. L. Hu

OSA Annual Meeting 1992

Albuquerque, New Mexico United States
20–25 September 1992
ISBN:

From the session
Symposium on Vertical-Cavity Surface-Emitting Lasers: 2 (FKK)

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J. J. Dudley, M. Ishikawa, B. I. Miller, D. I. Babic, R. Mirin, W. B. Jiang, M. Shimizu, J. E. Bowers, and E. L. Hu, "InGaAsP (1.3 μm) vertical-cavity lasers using GaAs/AlAs mirrors," in Optical Society of America Annual Meeting, Technical Digest Series (Optica Publishing Group, 1992), paper FKK7.

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Abstract

We demonstrate room temperature optically pumped operation of a 1.3 μm vertical-cavity laser (VCSEL) on a GaAs substrate. The 1.3 μm InGaAsP/ InP double heterostructures (DHs) were fused to GaAs/AlAs mirrors at 650°C in hydrogen. The larger refractive index ratio of GaAs to AlAs makes these mirrors an attractive alternative to mirrors made of InP/InGaAsP. Also, current can be injected through the GaAs /AlAs mirror into the InP DH. The second mirror is made by depositing a Si/SiNx dielectric stack. The wafer is optically pumped by using a mode-locked Nd:YAG laser with an 80 MHz repetition rate and 80 ps pulses. The room temperature threshold was 20 mW for a 16 μm diameter input spot. The laser operated in a single longitudinal mode at 1.283 μm up to twice threshold.

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