Abstract
Visible-laser diodes are attractive light sources in optical applications such as high-density optical storage devices and laser printers. The maximum output power attainable for AlGaInP lasers is currently not as high as that realized in AlGaAs lasers, but it is constantly improving. Studies carried out in AlGaAs (780-840 nm) lasers have indicated that high facet temperature plays an important role in facet degradation and catastrophic optical damage (COD). We will present data on the facet temperature measurements on 670 nm AlGaInP and 830 nm AlGaAs double-heterojunction lasers.
© 1992 Optical Society of America
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