Abstract

The ballistic acceleration of electrons inside a semiconductor in response to an applied field has recently been optically observed along with a sub-picosecond burst of terahertz electromagnetic radiation related to the acceleration of the carriers.¹ This experiment provides unique challenges to a modeler as it combines broadband electrodynamics with complex transport, e.g., the acceleration of carriers by the field during the finite duration of electron-phonon processes. In our paper, we discuss techniques by which all of these features may be modeled.² We additionally consider the prospect that may arise in other situations of interest in ultrafast studies of semiconductor devices and circuits.

© 1992 Optical Society of America