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Nonlinear Optical Effects at the Fundamental Absorption-Edge of Wide-Gap II-VI Semiconductors

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Abstract

Previous studies [1,2] have shown that very strong and fast optical nonlinearities occur near the fundamental absorption edge of the wide-gap II-VI semiconductors at room temperature. They are related to many-body effects (screening, gap-shrinkage, bandfilling) in the carrier-system excited and make these materials good candidates for optical signal processing applications in the visible spectral range.

© 1988 Optical Society of America

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