Abstract

It has recently become clear that OB in semiconductor laser amplifiers has many potential advantages for applications in optical logic and signal processing. Foremost among these advantages may be listed (i) ready availability (compared with other bistable devices [1]), (ii) wavelength compatibility with optical communications systems, (iii) inherent optical gain (for serial processing), and (iv) a combination of microwatt switching powers and nanosecond switching times leading to femtoule optical switching energies [2,3]. In support of item (ii) on this list, it is worth noting that amplifier OB has been reported at 0.8 μm [4], 1.3 μm [5], and 1.5 μm [6], all of which are wavelengths employed for optical communications systems.

© 1988 Optical Society of America