Nonlinearity of Thin-Film Semiconductor Interferometers Due to Interlayer Boundary Photoemf and Electrooptic Processes

F.V. Karpushko

doi:10.1364/OBI.1988.WB.7

Optical Bistability
Technical Digest Series (Optica Publishing Group, 1988),
paper WB.7
•https://doi.org/10.1364/OBI.1988.WB.7

Nonlinearity of Thin-Film Semiconductor Interferometers Due to Interlayer Boundary Photoemf and Electrooptic Processes

F.V. Karpushko

Optical Bistability 1988

Aussois France
23–25 March 1988
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F. V. Karpushko, "Nonlinearity of Thin-Film Semiconductor Interferometers Due to Interlayer Boundary Photoemf and Electrooptic Processes," in Optical Bistability, Technical Digest Series (Optica Publishing Group, 1988), paper WB.7.

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Abstract

From the first publication /1/ and up to now /2/ the thin-film semiconductor interferometer bistable devices have been the subject of serious interest to realize the components of optical digital computers. The purpose of this report is to show that in such systems strong and fast optical nonlinearity of electron nature is possible under certain conditions.

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