Abstract

ZnSe nonlinear interference filters (NLIFs) with aluminium or silicon absorbing layers can be operated as BEAT devices [1] at wavelengths where there is little internal absorption. To minimise transverse conduction, 20-50 μm size isolated Al patches have been deposited on the uppermost NLIF layer and bistable switching at < 10 mW power levels demonstrated at 830 nm using GaAlAs laser diode sources (see Figure 1). This technique will work equally well at 1.3 μm or 1.55 μm, requiring only a proportional change in spacer thickness, and it is therefore fully compatible with all fibre-optic communications wavelengths.

© 1988 Optical Society of America