Abstract

Antireflective thin film structures⁽¹⁾ have been used advantageously in write – once⁽²⁾⁽³⁾ and reversible phase change⁽⁴⁾ materials design to provide increased sensitivity, better marking contrast and to amplify the optical effects of small laser-induced marking effects. The same structures may be used in magneto-optic recording to increase the shot-noise-limited figure of merit R^½Θ_K for Kerr readout. Previous reports have analyzed the effects of single quarter-wave overlayers⁽⁵⁾ and more powerful approaches such as the encapsulated trilayer (quadrilayer)⁽⁶⁾. This paper will present a comprehensive analysis of the various approaches to antireflection structures and their relative enhancement capabilities for shot noise limited magneto-optic readout.

© 1987 Optical Society of America