Abstract

Our DVD-RAM/2.6GB was just commercialized in this year. Today, our R/D activities are aimed toward the next generation of DVD-RAM media and even the generation beyond that. We are striving to achieve higher recording density, a higher data transfer rate and higher reliability (cyclability). Through our study, we have found that a nitride interface layer was very effective for increasing the performance of phase-change optical disks. In this paper, we will present a new disk structure having Ge-N layers at the interface between the Ge-Sb-Te active layer and the ZnS-SiO₂ protective layers. The effects of the nitride layer and the disk performance will also be described.

© 1998 Optical Society of America